摘要
为了满足GaAs微波单片晶体管模型参数精确提取需求,论文开展了在GaAs衬底上制作专用TRL校准件的研究工作,该专用校准件在设计过程中,综合考虑了介质材料、测量端口探针至微带线过渡等要素,使校准后在片S参数测量的参考平面更加接近晶体管管芯,从而获得了微波单片晶体管真正管芯模型参数。为了对校准效果进行验证,制作了在片无源检验件,通过测量结果与电磁场仿真数值的对比,证实了该专用校准件满足模型参数提取的测量要求。
On-wafer TRL calibration standards on GaAs substrate for precision modeling on-wafer transistors is designed.The dielectric material and probe tips to the microstrip line structure on each port are taken into account during the design of these standards,so the system reference plane after calibration is near the on-wafer transistor chips.In order to validate the calibration results,passive on-wafer validation kits are manufactured.The experiment results show that the system using the dedicated TRL standards to calibrate behaved is closer to the electromagnetic simulation values than the use of commercial standards,and can achieve accurate extraction of the on-wafer transistor model.
出处
《计算机与数字工程》
2015年第1期21-23,74,共4页
Computer & Digital Engineering
关键词
在片TRL校准
在片S参数
晶体管表征
on-wafer TRL calibration
on-wafer S-parameters
transistor characterization
