期刊文献+

热压法制备Ti_3SiC_2陶瓷结合剂/金刚石复合材料的组织结构 被引量:2

Microstructure of Ti_3SiC_2/diamond composite materials prepared by hot-pressing
下载PDF
导出
摘要 以Ti、Si、C粉、金刚石磨料为原料,添加适量Al粉,采用热压法制备Ti3SiC2陶瓷结合剂/金刚石复合材料,通过X射线衍射、扫描电镜及能谱分析对该复合材料的组织结构进行观察与分析,并研究烧结温度、助熔剂Al含量以及金刚石浓度对复合材料的影响。结果表明,因金刚石的反应活性较差,较低温度下热压时金刚石表面未能生长出Ti3SiC2,1300℃高温下热压形成的Ti3SiC2晶粒发育良好;适量添加Al粉有助于Ti3SiC2的合成;金刚石颗粒浓度从25%增加到50%时,金刚石参与并促进Ti3SiC2的合成,Ti3SiC2含量明显增加;金刚石表面生成晶型发育良好的Ti3SiC2晶粒,实现了磨料与结合剂的化学键合,从而提高结合剂与磨料间的结合力。 Ti3SiC2 bonded diamond composite materials were prepared by hot-pressing using Ti, Si, C and diamond powders as the raw materials, Al as the adjuvant. The phase composition and microstructure of prepared composite were analyzed by XRD, SEM and EDS. Effects of sintering temperature, content of Al and concentration of diamond on the microstructure of Ti3SiC2 bonded diamond composite materials were also studied. The results show that, no Ti3SiC2forms on the surface of diamond at lower hot-pressing temperature because of the poor activity of diamond, the crystal structure of Ti3SiC2 can grow well when hot-pressed at 1 300 ℃, appropriate Al adding is beneficial to the synthesis of Ti3SiC2. With increasing concentration of diamond from 25% to 50%, Ti3SiC2 content increases obviously, which demonstrates that diamond can participate and promote the formation of Ti3SiC2. Ti3SiC2 grains growing well on the surface of the diamond can obtain the chemical bonding between abrasive and binder and enhance the holding force of bond to diamond.
出处 《粉末冶金材料科学与工程》 EI 北大核心 2015年第1期139-143,共5页 Materials Science and Engineering of Powder Metallurgy
基金 河南省科技开放合作项目(142106000051) 河南省省院合作项目(122106000052)
关键词 Ti3SiC2/金刚石 热压 化学键合 组织形貌 Ti3SiC2/diamond hot-pressing chemical bond morphology
  • 相关文献

参考文献8

二级参考文献162

共引文献36

同被引文献43

  • 1王志钢,朱德贵.Ti3SiC2/SiC复相陶瓷/45#钢摩擦副的摩擦学性能[J].润滑与密封,2006,31(6):115-117. 被引量:1
  • 2孙世成,金松哲,王蕾,齐雯.放电等离子烧结制备Cu/Ti_3SiC_2-TiC复合材料[J].长春工业大学学报,2007,28(2):124-127. 被引量:7
  • 3Barsoum M W.The MN+1 AXN phases:a new class of solids;thermodynamically stable nanolaminates[J].Progress in Solid State Chemistry,2000,28(1-4):201-81. 被引量:1
  • 4Barsoum M W,EI-Raghy T.Synthesis and characterization of a remarkable ceramic:Ti3Si C2[J].Journal of the American Ceramic Society,1996,79(7):l953-1956. 被引量:1
  • 5Luo Y M,Pan W,Li S Q,et al.Synthesis and mechanical properties of in-situ hot-pressed Ti3Si C2polycrystals[J].Ceramics International,2002,28:227-230. 被引量:1
  • 6Gao N F,Miyamoto Y,Zhang D.Dense Ti3Si C2prepared by reactive HIP[J].Journal of Materials Science,1999,34:4385-4392. 被引量:1
  • 7Zhou W B,Mei B C,Zhu J Q.Fabrication of high-purity ternary carbide Ti3Si C2by spark plasma sintering technique[J].Materials Letters,2005,59:1547-1551. 被引量:1
  • 8Luo Y M,Pan W,Li S Q,et al.Synthesis of high-purity Ti3Si C2polycrystals by hot-pressing of the elemental powders[J].Materials Letters,2002,52:245-247. 被引量:1
  • 9Zhou Y C.Sun Z M.Temperature f1uctuation/hot pressing synthesis of Ti3Si C2[J].Journal of Materials Science,2000,35:4343-4346. 被引量:1
  • 10Jaworska L,Stobierski L,Twardowska A,et al.Ti3Si C2as a bond-ing phase in diamond composites[J].Journal of Materials Science Letters,2001,20:1783-1786. 被引量:1

引证文献2

二级引证文献7

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部