期刊文献+

界面热力学在Sn晶须生长研究中的应用 被引量:2

Application of Interface Thermodynamics in Study on Sn Whisker Growth
下载PDF
导出
摘要 目的研究金属间化合物与Sn晶须在Sn-Cu薄膜体系中形成的热力学机制。方法利用界面热力学理论,通过计算相应的表面能、界面能和临界厚度,研究金属间化合物的形成与Sn晶须的生长过程。结果金属间化合物Cu6Sn5先在Sn晶界与Cu/Sn界面交界处形成,然后沿着Cu/Sn界面生长;产生的应力梯度驱动Sn原子扩散至表面,形成Sn晶须。结论 Sn晶须的生长源于Sn层中金属间化合物的生成,并由此提出了抑制Sn晶须生长的方法 。 Objective To investigate the thermodynamic mechanisms of the intermetallic compound( IMC) formation and Sn whisker growth in Sn-Cu bilayer thin film system. Methods Using the interface thermodynamics theory,the IMC formation and the Sn whisker growth were studied through calculating the corresponding surface energies,interface energies and critical thickness.Results The IMC Cu6Sn5 was firstly formed at the triple junction of Sn grain boundary and Sn / Cu interface and then grew along the Sn / Cu interface. The resulting stress gradient drove the diffusion of Sn atoms to the surface and formed Sn whisker on it. Conclusion The Sn whisker growth was caused by the IMC formation in Sn sublayer,based on which some methods were proposed for inhibiting the growth of Sn whisker.
机构地区 汕头大学理学院
出处 《表面技术》 EI CAS CSCD 北大核心 2015年第2期1-7,18,共8页 Surface Technology
基金 国家自然科学基金(11274218)~~
关键词 界面热力学 金属间化合物相 SN晶须 生长机制 interface thermodynamics intermetallic compound phase Sn whisker growth mechanism
  • 相关文献

参考文献47

  • 1GALYON G T. Annotated Tin Whisker Bibliography and An- thology [ J ]. IEEE Transactions on Electronics Packaging Manufacturing, 2005,28 ( 1 ) : 94-122. 被引量:1
  • 2LEBRET J B, NORTON M G. Electron Microscopy Study of Tin Whisker Growth [ J ]. Journal of Materials Research, 2003,18(3) :585-593. 被引量:1
  • 3SOBIECH M, KRUGER C, WELZEL U, et al. Evolution of Microstructure and Stress of and Associated Whisker Growth on Sn Layers Sputter-deposited on Cu Substrates [ J ]. Jour- nal of Materials Research ,2010,25 ( 11 ) :2166-2174. 被引量:1
  • 4LEE N-C. Lead-free Soldering-Where the World is Going [ J ]. Advancing Microelectronics, 1999,26 ( 5 ) :29-35. 被引量:1
  • 5LEE B-Z, LEE D N. Spontaneous Growth Mechanism of Tin Whiskers[ J]. Acta Materialia, 1998,46(10) :3701-3714. 被引量:1
  • 6SOBIECH M,WELZEL U,SCHUSTER R, et al. The Micro- structure and State of Stress of Sn Thin Films after Post- plating Annealing: An Explanation for the Suppression of Whisker Formation? [ C ]//Electronic Components and Technology Conference,2007 ECTC '07 Proceedings 57th. [ s. l. ] : Institute of Electrical and Electronics Engineers (IEEE) ,2007:192-197. 被引量:1
  • 7FUKUDA Y, OSTERMAN M, PECHT M. The Effect of An- nealing on Tin Whisker Growth[ J]. IEEE Transactions on E- lectronics Packaging Manufacturing,2006,29(4) :252-258. 被引量:1
  • 8BRUSSE J, EWELL G, SIPLON J. Tin Whiskers : Attributes and Mitigation [ J ]. Carts Europe, 2002,16:221-233. 被引量:1
  • 9CRANDALL E R. Factors Governing Tin Whisker Growth [ M ]. Chain: Springer International Publishing ,2013. 被引量:1
  • 10DITrES M, OBERNDORFF P, PETIT L. Tin Whisker For- mation-Results,Test Methods and Countermeasures[ C ]// Electronic Components and Technology Conference, 2003 Proceedings 53rd. [ s. l ] : Institute of Electrical and Elec- tronics Engineers (IEEE) ,2003:822-826. 被引量:1

同被引文献33

引证文献2

二级引证文献24

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部