摘要
氧化还原法制备石墨烯是目前被广泛采用的一种方法。但用此方法制备的石墨烯片比较容易产生皱褶或折叠,厚度偏大,有很多缺陷。所以用此方法制备的石墨烯导电性不理想,使其在电极材料方面的应用受到了很大的限制。对采用氧化还原法制备石墨烯过程中的主要工艺参数进行了研究,并通过拉曼光谱的测试结果来表征和分析石墨烯的缺陷程度,最终确定石墨烯的结构与主要工艺参数之间的关系。
At present, the method widely used to prepare graphene is oxidation-reduction method. But the graphene obtained by this method often possesses wrinkleand more defects with large thickness, which restricts application in the field of electrode materials. This paper investigated the main technological parameter in the preparation process of graphene by oxidation-reduction. The degree of the graphene defects was tested by Raman spectrometer, which can finally confirm the relationship between the graphene structure and the preparation parameter.
出处
《炭素技术》
CAS
北大核心
2014年第6期20-23,共4页
Carbon Techniques
关键词
氧化还原法
石墨烯
缺陷
工艺参数
Oxidation-reduction method
graphene
defects
technological parameter
