摘要
针对国产锗硅异质结双极晶体管(SiGe HBT),采用半导体器件三维计算机模拟工具,建立单粒子效应三维损伤模型,研究不同偏置状态对SiGe HBT单粒子效应的影响.分析比较不同偏置下重离子入射器件后,各端口电流瞬变峰值和电荷收集量随时间的变化关系,获得SiGe HBT单粒子效应与偏置的响应关系.结果表明:不同端口对单粒子效应响应的最劣偏置不同,同一端口电荷收集量和瞬变电流峰值的最劣偏置也有所差异.载流子输运方式变化和外加电场影响是造成这种现象的主要原因.
In this paper we establish a three-dimensional （3D） numerical simulation model of domestic SiGe heterojunction bipolar transistor （SiGe HBT） by using technology computer aided design tools, to study the bias effect on single event effect （SEE） of SiGe HBT. The response relationship between SEE and the bias of SiGe HBT is identified based on the analyses of transient current peak and charge collection of each terminal. The results show that the worst biases for SEE are different for different terminals. Even for the same terminal, the worst biases for charge collection and transient current peak are different. This phenomenon is caused mainly by the influence of applied electric field and the change of carrier transport mode.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2014年第24期442-449,共8页
Acta Physica Sinica
基金
国家自然科学基金(批准号:61274106
11175138)资助的课题~~
关键词
锗硅异质结双极晶体管
不同偏置
单粒子效应
三维数值仿真
SiGe heterojunction bipolar transistor，different bias，single event effect，3D numerical simulation
