摘要
忆感器是从忆阻器概念推演出来的一个新的具有记忆功能的非线性电路元件。基于忆感近似等效电路模型,采用一个有源磁控忆阻器实现等效电路中的忆阻器,建立了忆感近似等效电路的状态方程组;借助MATLAB数学工具软件,进行了等效忆感器特性的数值仿真分析。结果表明,等效忆感器的韦安关系呈现典型的紧磁滞回线特性,且依赖于外加电压激励频率。通过有源磁控忆阻器的等效电路进行了忆感近似等效电路的实验验证,实验测量结果和数值仿真结果基本一致,说明了忆感近似等效电路模型的正确性。
Meminductor, extended from the notion of memristor, is a novel nonlinear circuit element with memory function. Based on the model of meminductor approximate equivalent circuit and by utilizing an active flux-controlled memristor to realize the memristor in the equivalent circuit, a state equation set of the meminductor approximate equivalent circuit is established. With the help of MATLAB mathematical tool software, the properties of the equivalent meminductor are analyzed numerically. The results indicate that the flux-current relations of the equivalent meminductor typically behave as a pinched hysteresis loop characteristics and depend on the frequencies of applied voltage stimulus. By using the equivalent circuit of active flux-controlled memristor, the experimental verification for meminductor approximate equivalent circuit is performed. The experimental measurement results agree essentially with numerical simulation results, which illustrate that the model of meminductor approximate equivalent circuit is effective.
出处
《电子科技大学学报》
EI
CAS
CSCD
北大核心
2014年第6期845-849,共5页
Journal of University of Electronic Science and Technology of China
基金
国家自然科学基金(51277017)
江苏省自然科学基金(BK2012583)
关键词
等效电路
实验
韦安关系
忆感器
仿真
equivalent circuit
experimental
flux-current relation
meminductor
simulation
