摘要
基于绝缘栅双极型晶体管(IGBT)芯片疲劳机理,提出采用关断时间对IGBT健康状态进行监控的可靠性评估方法。采用理论分析与解析描述相结合的方法,建立了IGBT关断电流下降时间模型,进而通过研究IGBT关断时间特征量疲劳机理,建立了IGBT关断时间可靠性评估模型。仿真和实验验证了该模型的正确性与准确性。通过该模型可对IGBT的健康状况进行准确评估。
Based on the chip fatigue mechanism of insulated gate bipolar transistor（IGBT）,it is put forward that the reliability evaluation method of turn-off time against health monitoring.The fall time model of IGBT turn-off current is established with the combined method of theoretical analysis and analytical description,and the reliability model of turn-off time is established through the research of turn-off time fatigue mechanism.Simulation and experimental results verify the lightness and accuracy of the model.It is significant for the accurate evaluation of IGBT health.
出处
《电力电子技术》
CSCD
北大核心
2014年第11期73-76,共4页
Power Electronics
基金
国家自然科学基金(51277178)
国家重点基研究发展计划973项目(2013CB035601)~~
关键词
绝缘栅双极型晶体管
疲劳机理
关断时间
可靠性模型
insulated gate bipolar transistor
fatigue mechanism
turn-off time
reliability model
