摘要
提出了一种基于在GaAs AlGaAs非对称耦合量子阱材料子带跃迁的量子干涉的半导体弱光开关。分析了弛豫速率γ2 1对光开关的影响。这种半导体弱光开关是半导体超晶格材料共振隧穿作用导致的子带跃迁的Fano干涉的结果。由于半导体结构与材料可以人为地选择 ,相干强度可以控制和改变 ,这种半导体弱光开关比采用原子系统更实用。
A scheme of a weak optical switch in GaAs\|AlGaAs asymmetric coupled quantum wells is proposed. The effect of dephasing rate γ 21 on the switch is analysized. The optical switch is induced by Fano interference in coherent effects between inter subbands in superlattices. This weak semiconductor switch is more practical than that of atomic media due to its flexibility for choosing materials and structure dimensions of the utilized heterostructures. This is also a method of controlling one beam by another in semiconductor.
出处
《光学学报》
EI
CAS
CSCD
北大核心
2002年第7期870-873,共4页
Acta Optica Sinica
基金
国家自然科学基金 (19974 0 4 7)
吉林大学青年基金(2 0 0 0A0 4 )资助课题
