摘要
基于通过负温度系数电压控制工作于亚阈值区MOS管栅压产生随温度变化的补偿电流原理,采用中芯国际0.18μm CMOS工艺,设计了一款高精度二阶温度补偿带隙基准电压源。测试结果表明,当电源电压大于1.6V时,电路能够产生稳定的1.21V输出电压;在电源电压为1.6-3.4V,-20-135℃温度范围内,最小温度系数为2×10-6/℃,最大温度系数为3.2×10-6/℃;当电源电压在1.6-3.4V之间变化时,输出电压偏差为0.6mV,电源调整率为0.34mV/V;在1.8V电源电压下,电源抑制比为69dB,因此能够适应于高精度基准源。
A high precision bandgap voltage reference（BGR）with the second-order temperature compensation is presented.By employing a voltage with a negative temperature coefficient to control the MOSFET working in sub-threshold region,a convex curve is introduced to compensate the first-order BGR based on the SMIC 0.18μm CMOS process.The measurement results show that the stable output voltage is 1.21 Vwhen the power supply is larger than 1.6V.The temperature coefficient is 2×10-6/℃at 1.6Vand 3.2×10-6/℃at 3.4Vwith the temperature changing from-20℃to 135℃.When the power supply changes from 1.6Vto 3.4V,the output voltage deviation is 0.6mV.A power-supply noise attenuation of 69 dB is achieved at 1.8V power supply,making it suitable for high precision reference voltage.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2014年第5期470-475,共6页
Research & Progress of SSE
基金
广东省科技计划资助项目(2011B040300035)
关键词
高精度
二阶温度补偿
亚阈值区
带隙基准电路
电源抑制比
high precision
second-order temperature compensation
sub-threshold region
bandgap reference circuit
power supply rejection ratio（PSRR）
