摘要
基于2μm SOI CMOS工艺,设计了一种输出电压达负电源的运放,用作12位四通道D/A转换器的单位增益缓冲。分别在VDD=+5V,VSS=0V,VREFH=2.5V,VREFL=0V以及VDD=+15V,VSS=-15V,VREFH=10V,VREFL=-10V这两种条件下测试D/A转换器性能,该转换器的INL分别为-0.31LSB和0.27LSB。测试结果表明,该运放的性能满足D/A转换器的要求。
Based on 2 μm SO1 CMOS process, an amplifier with output voltage reaching negative power supply was designed as a 12-bit four-channel D/A converter＇s unit gain output buffer. Under two conditions of VDD = ＋5 V,Vss=0 V,VREFH =2. 5 V,VREFL=0 V and VDD= ＋15 V,Vss=-15 V,VREeH =10 V,VREuL=-10 V to test the performance of the D/A converter, the INLs of the converter were -0.31 LSB and 0.27 LSB respectively. The test results showed that the performance of the amplifier could meet the requirement of the D/A converter.
出处
《微电子学》
CAS
CSCD
北大核心
2014年第5期582-586,共5页
Microelectronics
