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Properties of polaron in a triangular quantum well induced by the Rashba effect 被引量:2

Properties of polaron in a triangular quantum well induced by the Rashba effect
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摘要 The properties of the weakly-coupling bound polaron, considering an influence of Rashba effect, which is brought about by the spin-orbit (SO) interaction, in an semiconductor triangular quantum well (TQW), have been studied by using the linear combination operator and the unitary transformation methods. We obtain an expression for the ground state energy of the weak-coupling and bound polaron in a TQW as a function of the coupling constant, Coulomb bound potential, and the electron areal density. Our numerical resuks show that the ground state energy of the polaron is composed of four parts, one part is caused by the electrons' own energy, the second part is caused by the Rashba effect, the third part occurs because of the Coulomb bound potential, and the last term is induced by the interaction between the electrons and LO phonons. The interactions between the orbit and the spin with different directions have different effects on the ground state energy of the polaron. The properties of the weakly-coupling bound polaron, considering an influence of Rashba effect, which is brought about by the spin-orbit (SO) interaction, in an semiconductor triangular quantum well (TQW), have been studied by using the linear combination operator and the unitary transformation methods. We obtain an expression for the ground state energy of the weak-coupling and bound polaron in a TQW as a function of the coupling constant, Coulomb bound potential, and the electron areal density. Our numerical resuks show that the ground state energy of the polaron is composed of four parts, one part is caused by the electrons' own energy, the second part is caused by the Rashba effect, the third part occurs because of the Coulomb bound potential, and the last term is induced by the interaction between the electrons and LO phonons. The interactions between the orbit and the spin with different directions have different effects on the ground state energy of the polaron.
作者 张海瑞 孙勇
出处 《Journal of Semiconductors》 EI CAS CSCD 2014年第10期1-4,共4页 半导体学报(英文版)
基金 Project supported by the National Science Foundation of China Higher University(No.10347004) the Science Study Foundation of InnerMongolia(No.NJZY08085) the Science Foundation of Huhhot University of Nationalities(No.HMZZ1201)
关键词 triangular quantum well SPINTRONICS the ground state energy Rashba effect triangular quantum well spintronics the ground state energy Rashba effect
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