摘要
针对早期研制的激光直写装置存在的刻写速度慢、功能不够完善的缺点,重新设计并搭建了一套小型激光直写光刻系统。该系统采用波长405nm可高速模拟调制的单横模半导体激光器作为刻写光源,结构更为简单紧凑;采用正弦振荡模式控制纳米平台运动,大幅度提高了刻写速度;增加了刻写光源功率校正功能、基于互补金属氧化物半导体(CMOS)相机的样品观察功能、蓝光共聚焦成像功能以及刻录光源功率衰减以实现一般光刻胶刻写的功能。通过记忆调焦数据,刻写蓝光、辅助聚焦红光以及样品观察绿光三束光分时工作,互不干扰。实验表明,该光刻系统可在光敏薄膜材料上进行打点、刻画矢量和标量图形等多种操作,刻写范围200μm×200μm,最少用时100s,刻写分辨率在250nm以内。
As the early developed laser direct writing device has low writing speed and its function is not perfect,a new compact system is designed and constructed.A405 nm high-speed analog modulated semiconductor laser is used as the light source to make the structure more compact;the movement of the nano platform is adjusted to sinusoidal oscillating mode to increase writing speed;functions such as writing power calibration,sample observation based on complementary meta-oxide-semiconductor transistor（CMOS）,blue light confocal imaging and ordinary photoresist writing are added.By recording focus date,writing light,auxiliary focusing light and sample observing light can work separately and will not interfere with each other.Experiments show that the system can plot or pattern vector and scalar graphics on arbitrary photosensitive films.It takes at least 100 s to finish writing200μm×200μmwriting area with writing feature size smaller than 250 nm.
出处
《中国激光》
EI
CAS
CSCD
北大核心
2014年第10期273-280,共8页
Chinese Journal of Lasers
