期刊文献+

化学机械抛光设备负载特性与主体结构变形 被引量:2

Load Characteristic of CMP Equipment and Deformation of Its Main Structure
下载PDF
导出
摘要 化学机械抛光(Chemical mechanical polishing,CMP)材料去除及负载特性主要受界面摩擦影响。对旋转型CMP系统进行了运动学和动力学分析,由此建立了CMP设备抛光界面摩擦负载(包括摩擦力矩和摩擦径向力)表达式。系统研究了CMP设备抛光头&抛光盘主体结构负载特性随运动参数的变化规律,发现抛光头/盘转速比对负载影响最为明显:随转速比的增加,抛光头所受摩擦力矩增加,抛光盘所受摩擦力矩减小;且对抛光头而言存在值为1的临界转速比,当转速比小于1时,摩擦力矩对抛光头为驱动力矩;实际工况下转速比接近1时,抛光头所受摩擦力矩几乎为零,因相对运动而产生的摩擦负载主要由抛光盘承载。在此基础上,采用商用有限元分析软件建立了抛光盘及转子有限元模型,分析了抛光盘在螺钉预紧力、偏心轴向力和摩擦力矩复合载荷作用下的变形特性,为CMP装备设计提供了依据。 Interface friction affects the material removal and load characteristic of chemical mechanical polishing (CMP). The kinematic and dynamic analysis is performed for rotary type CMP system. Based on which, the expression of the interfacial friction load (including the friction torque and the friction radial load) is deduced. The laws of the load characteristic of the carrier & platen main structure variation with the kinematic parameters are investigated, which suggests that the speed ratio gives the most obvious effect on the load. With the increasing of speed ratio, the friction torque of the carrier increase, while the friction torque of the platen decrease. And there is a critical speed ratio with the value of 1 for the carder. When the speed ratio is below 1, the friction torque appears driving torque for the carder. In actual condition, the speed ration is close to 1, therefore, the friction torque of the carder is nearly zero. As a result, the interface friction torque caused by the relative motion is mainly loaded by the platen. Further, a finite element analysis (FEA) model of the platen and the rotor is constructed using commercial FEA software. The deformation of the platen surface under the combined load of tightening torque, eccentric axial load and friction torque is analysed, which provides a reference for the design of CMP equipment.
出处 《机械工程学报》 EI CAS CSCD 北大核心 2014年第15期160-165,共6页 Journal of Mechanical Engineering
基金 国家科技重大专项(2008ZX02104-001) 国家自然科学基金(51305227) 中国博士后科学基金(2012M520251)资助项目
关键词 化学机械抛光 动力学 摩擦力矩 有限元 抛光盘 chemical mechanical polishing kinetics friction torque finite element analysis polishing platen
  • 相关文献

参考文献11

  • 1OLIVER M R. Chemical mechanical polishing[J].Semiconductor Internationa!, 2003,26(6) : 130. 被引量:1
  • 2童志义.CMP设备市场及技术现状[J].电子工业专用设备,2000,29(4):11-18. 被引量:6
  • 3郭东明,康仁科,苏建修,金洙吉.超大规模集成电路制造中硅片平坦化技术的未来发展[J].机械工程学报,2003,39(10):100-105. 被引量:92
  • 4ZHAO Yongwu, CHANG L, KIM S H. A mathematicalmodel for chemical-mechanical polishing based onformation and removal of weakly bonded molecularspecies[J]. Wear, 2003, 254(3-4): 332-339. 被引量:1
  • 5MARKUS F. Effect of process parameters on materialremoval rate in chemical mechanical polishing ofsi( 100)[J]. Microelectronic Engineering,2005, 77(3-4):319-326. 被引量:1
  • 6KIM H J, JEONG H D. Effect of process conditions onuniformity of velocity and wear distance of pad and waferduring chemical mechanical planarization[J]. Journal ofElectronic Materials, 2004,33(1): 53-60. 被引量:1
  • 7ZHAO Dewen, HE Yongyong, WANG Tongqing, et al.Effect of kinematic parameters and their couplingrelationships on global uniformity ofchemical-mechanical polishing[J]. IEEE Transactions onSemiconductor Manufacturing, 2012, 25(3): 502-510. 被引量:1
  • 8吴宏基,曹利新,刘 健.基于行星式平面研磨机研抛过程的运动几何学分析[J].机械工程学报,2002,38(6):144-147. 被引量:28
  • 9WANG Cailing,JIN Zhuji, KANG Renke. Effects ofkinematic forms on material removal rate andnon-uniformity in chemical mechanical planarisation[J].International Journal of Materials & Product Technology,2008,31(1): 54-62. 被引量:1
  • 10PAN Yan , LU Xinchun,PAN Guoshun,et al.Performance of sodium dodecyl sulfate in slurry withglycine and hydrogen peroxide for copper-chemicalmechanical polishingfj]. Journal of The ElectrochemcialSociety, 2010, 157(12): I1082-I1087. 被引量:1

二级参考文献28

  • 1佐佐木重夫.微分几何学[M].上海:上海科学技术出版社,1963.. 被引量:3
  • 2..http://www.brewerscience.com.,. 被引量:1
  • 3Laertis Economikos. STI planarization using fixed abrasive technology, http://www.future- fab.com/. 被引量:1
  • 4Vo T, Buley, T Gagliardi J. Improved planarization for STI with fixed abrasive technology. Solid State Tech.,2000(6): 23-28. 被引量:1
  • 5Van der Velden. P Chemical mechanical polishing with fixed abrasives using different subpads to optimize wafer uniformity. Microelectronic Engineering, 2000, 50:41--46. 被引量:1
  • 6Nguyen V H, Hof A J, Kranenburg H Van, et al, Copper chemical mechanical polishing using a slurry-free technique. Microelectronic Engineering, 2001, 55: 305~312. 被引量:1
  • 7Li S J, Sun L Z, Stan Tsai, et al, A low cost and residuefree abrasive-free copper CMP process with low dishing.Erosion And Oxide Loss, IITC 2001 / IEEE. 被引量:1
  • 8Annabel Nickles, Dan Marohl, Gopal Prabhu, et al. Slurryless CMP enables next-generation direct polish STI.http://sst.pennnet, com/Articles. 被引量:1
  • 9Basol B M, Uzoh C E, Talieh H, et al. Electrochemical mechanical deposition (ECMD) technique for semiconductor interconnect applications, Microelectronic Engineering, 2002, 64:43--51. 被引量:1
  • 10Wang D H, Afnan M, Chiao S S. Stress-free polishing advances use of copper interconnects on silicon wafers.Semiconductor Fabtech - 13th edition, 2000:255--257. 被引量:1

共引文献120

同被引文献24

引证文献2

二级引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部