摘要
在优化薄膜制备工艺的基础上,通过实验对Cu、CuNi薄膜的电阻率与T型薄膜热电偶(TFTC)灵敏度之间的关系进行了研究。首先,通过设计正交试验,以Cu、CuNi薄膜电阻率为考察指标,得到了影响电阻率的主次因素以及各工艺参数对薄膜电阻率的影响规律。然后根据实验结果确定工艺参数条件,制备出了薄膜电阻率不同的3个T型薄膜热电偶,并对其灵敏度进行了实验标定。标定结果表明:T型薄膜热电偶的薄膜电阻率越小,其灵敏度越大。
Based on the optimization for the film preparation process, the relationship between resistivities of Cu, CuNi films and the sensitivity of T-type thin film thermocouple （TFTC） was studied with experiments. First, by means of orthogonal experiment designing with the resistivities of Cu, CuNi films as the experimental index, not only primary and secondary factors but also the effects of process parameters on resistivity were obtained. Then according to the experimental results to determine the process parameters, three T-film thermocouples with different resistivities of films were prepared, and their sensitivities were calibrated with experiments. Calibration results show that： the smaller the films resistivities of T-type thermocouples are, the larger the its sensitivity is.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2014年第9期45-49,共5页
Electronic Components And Materials
关键词
T型薄膜热电偶
热电势率
灵敏度
电阻率
正交试验
静态标定
T-type TFTC
thermal potential rate
sensitivity
resistivity
orthogonal experiment
static calibration
