摘要
基于调制掺杂的ZnMgO/ZnO异质结构模型,通过自洽求解一维泊松-薛定谔方程,研究了掺杂浓度、空间层厚度对ZnMgO/ZnO异质界面处二维电子气(2DEG)的分布、面密度等性质的影响。结果表明:ZnO沟道中的二维电子气主要来源于极化效应诱生的电子和掺杂层转移的电子,通过改变掺杂浓度和空间层厚度可以有效地调控异质结中的二维电子气。采取的研究方法和所得结果可以为ZnO基异质结构及相关器件的构筑提供基础。
Based on the model of modulation-doped ZnMgO/ZnO heterostructure, the distribution and the sheet concentration of two-dimensional electron gas （2DEG） in heterointerface for different structural parameters were stu- died by solving the one-dimensional Poisson-Schr6dinger equations self-consistently. The influence of the doping con- centration and the spacer layer were investigated separately. The results indicated that the 2DEG in the channel layer consists of the electrons induced by the polarization effect and the electrons supplied by the doping layer, and thus can be controlled effectively by changing the thickness of the spacer layer and the doping concentration. The method and the results provides an important basis for the fabrication of ZnO-based structures and related devices.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2014年第14期138-141,共4页
Materials Reports
基金
国家自然科学基金(11304092)
湖北省教育厅科学研究计划项目(Q20131404)
湖北省科技厅自然科学基金(2013CFB028)
