摘要
通过引入周期性排列波浪形预结构基底,建立了Si薄膜生长的三维动力学Monte Carlo模型.利用该模型在此基底上分别正常沉积和倾斜沉积Si薄膜,研究薄膜在不同沉积条件下的生长过程及其内在的生长规律.通过计算机模拟,论证了在正常沉积条件下薄膜呈均匀生长模式,而在大角度倾斜沉积条件下,薄膜生长呈各向异性非均匀生长模式.
A uniform arranged triangular prism structure is introduced in our 3 D KMC simulation model to mimic the nano-patterned substrate to explore the growth evolution of Si films under different deposition conditions.Through computer simulation,the results show that the growth proceeds highly conformal,resulting in a thin modulated film,but there is a transition of growth mode from continuous growth to anisotropic columnar under （GLAD）conditions.
出处
《暨南大学学报（自然科学与医学版）》
CAS
CSCD
北大核心
2014年第2期201-204,共4页
Journal of Jinan University(Natural Science & Medicine Edition)
基金
广东省高等学校学科与专业建设专项(育苗工程)(2013LYM0084)
