摘要
Ce-doped Hf02 （HfCeO） films are prepared by radio-frequency magnetron sputtering. The influences of rapid thermal annealing on the structure and electrical properties of HfCeO films are investigated. The results show that the incorporation of Ce into Hf02 increases the crystallization temperature of Hf02, and the cubic phase of Hf02 can be stabilized by incorporating Ce into Hf02. After high temperature annealing, Hf 4f core level spectra shift to a higher energy, whereas O 1s core level spectra shift to a lower energy. With increasing annealing temperatures, the effective permittivity increases, whereas the flat-band voltage shift and effective oxide charge density decrease. Moreover, the leakage current density of the HfCeO films decreases initially, and then increases as the annealing temperature increases.
Ce-doped Hf02 （HfCeO） films are prepared by radio-frequency magnetron sputtering. The influences of rapid thermal annealing on the structure and electrical properties of HfCeO films are investigated. The results show that the incorporation of Ce into Hf02 increases the crystallization temperature of Hf02, and the cubic phase of Hf02 can be stabilized by incorporating Ce into Hf02. After high temperature annealing, Hf 4f core level spectra shift to a higher energy, whereas O 1s core level spectra shift to a lower energy. With increasing annealing temperatures, the effective permittivity increases, whereas the flat-band voltage shift and effective oxide charge density decrease. Moreover, the leakage current density of the HfCeO films decreases initially, and then increases as the annealing temperature increases.
基金
Supported by the National Natural Science Foundation of China under Grant No 61376091, the Natural Science Foundation of Shaanxi Province under Grant No 2012JM6012, the Fundamental Research Funds for the Central Universities under Grant No 3102014JCQ01033, and the 111 Project of China under Grant No B08040.
