摘要
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm^2/V·s with a residual electron concentration of 5.7 × 10^18 cm^-3. THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.
We report the growth of a-plane InN on an r-plane sapphire substrate by plasma-assisted molecular-beam epitaxy. It is found that the a-plane InN is successfully grown by using a CaN buffer layer, which has been confirmed by reflection high-energy electron diffraction, x-ray diffraction and Raman scattering measurements. The Hall effect measurement shows that the electron mobility of the as-grown a-plane InN is about 406 cm^2/V·s with a residual electron concentration of 5.7 × 10^18 cm^-3. THz emission from the a-plane InN film is also studied, where it is found that the emission amplitude is inversely proportional to the conductivity.
基金
Supported by the National Basic Research Program of China under Grant No 2012CB619300, the National Natural Science Foundation of China under Grant Nos 61225019, 11023003 and 61376060, and the National High-Technology Research and Devel- opment Program of China under Grant No 2011AA050514.
