摘要
A different approach,using the molecular beam epitaxy (MBE)-grown ZnS-based Schottky photodiode technology,is applied to fabricate an 8×8 photodiode array.The micro-processing procedures of this photodiode array including standard photolithography,a number of metallisation,wet-chemical etching and SiO_2 deposition for insulation are developed.The detector is characterized to have a cutoff wavelength at 340 nm and the photo-responsivity measurements on the pixels result an ultraviolet (UV) response as high as 0.15 A/W,corresponding to an external quantum efficiency of 55% in the visible-blind spectral ranging from 400 down to 250nm.Imaging tests indicate that this array is able to capture the intensity profile of a given UV light source with reasonably good capability.
基于分子束外延 (MBE)生长技术 ,制备出了新颖的 8× 8Zn S肖特基光电二极管阵列 ,研究了制备该器件的标准光刻 ,金属沉积 ,湿化学腐蚀 ,Si O2 绝缘层沉积等一系列微电子处理工艺 .该肖特基光电二极管阵列的光谱响应截止边为 34 0 nm.在 40 0～ 2 5 0 nm的可见光盲区域 ,光电响应测试显示该器件在截止边波长处具有 0 .15 A/ W的高响应度 ,相对应的量子效率为 5 5 % .成像测试显示该器件具有良好的紫外成像特性 .
基金
国家自然科学基金 (批准号 :5 9910 16 1981)
香港RGC研究资助局 (批准号 :NSFC/ HKU ST35 )资助项目~~
