摘要
应用微波电子回旋共振化学气相沉积 (MWECRCVD)方法 ,在较高速度下沉积了α Si:H薄膜 ,用FTIR红外谱仪研究了α Si:H薄膜的结构特性随H2 /SiH4 、沉积温度和沉积速率变化关系 ,并对 2 0 0 0cm-1附近的特征吸收峰用高斯函数进行了拟合分析 ,获得了沉积高质量α Si:H薄膜的最佳工艺条件。
Si:H films were deposited with a high deposition rate in a microwave electron cyclotron resonance chemical vapor deposition (MWECR CVD) system.FTIR spectra of the films were measured.The results showed the dependence of the structrute on the deposition conditions,such as the flow ratio of H 2 and SiH 4,deposition temperature and deposition rate.Moreover,fitting analysis of the special peak on 2000cm -1 has been done with Gauss function.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2002年第3期321-324,共4页
Journal of Synthetic Crystals
基金
国家 973资助项目 (G0 0 0 0 2 82 0 1 1)
