摘要
研制了灵敏区面积为4 0 ,5 0和6 0mm ,耗尽层厚度为 2 0 0— 30 0 μm的电流型大面积薄型PIN半导体探测器 ,并对其物理性能进行了测量 .测试和应用表明 ,这些探测器性能稳定 ,漏电流符合使用要求 .与市场上的大面积PIN半导体探测器相比 ,这些探测器主要在几百伏偏压下工作在电流模式 ,但也可用于计数模式 ,而目前的商用产品仅适用于计数测量 .
Large area silicon semiconductor detectors for use in the current mode, with their dimensions of 40, 50 and 60mm, their depletion thickness of 200—300 μm, have been developed. Their performance measurements have been made, which indicate that the developed detectors can satisfactorily meet the needs in expectation. Compared with the detectors commercially available on the market, our large PIN detectors can serve both as reliable and efficient high resolution devices for nuclear counting experiments, as well as monitors of high intensity radiation fields in the current mode under a bias of 100—1000 V, while the detectors commercially available are only for the counting use.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第7期1502-1505,共4页
Acta Physica Sinica
