摘要
描述了为改善其表面驻极态的抗湿能力 ,对 Si基 Si3N4 和 Si3N4 /Si O2 薄膜驻极体所进行的化学表面修正的基本原理。以六甲基二硅胺烷 (HMDS)和二氯二甲基硅烷 (DCDMS)两种化学修正试剂对这类薄膜驻极体的改性效果进行了对比性的研究。结果指出 :从抗湿能力考虑 ,经 DCDMS修正的氮、氧化硅驻极体的电荷稳定性优于 HMDS处理的样品 ,是由于这类修正形成了更完善的表面单分子疏水层 ;但如果从驻极体的储电热稳定性方面考虑 ,以 HMDS处理的样品优于 DCDMS样品 ,是由于被 HMDS修正的表面层内形成了较高浓度的深能级陷阱。
In this paper,in order to improve the surface electret state for enhancing humidity proof,the basic principle of chemical surface modification to silicon nitride film and silicon nitride/silicon dioxide double layer film based on silicon substrate was discussed.The comparison of improvement effect of chemical surface modification between HMDS(Hexamethyldisilazane)and DCDMS(Dichlorodimethylsilane)was investigated.It was pointed out that according to humidity proof ability,the films modified by DCDMS is better than that by HMDS,because the modification formed more perfect hydrophobic layer on the free surface of the films;however,according to thermal stability of charge stored in the electret,the films modified by HMDS is better than that by DCDMS,because higher concentration of deep traps was generated after modification by HMDS.
出处
《压电与声光》
CAS
CSCD
北大核心
2002年第3期208-212,共5页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目 (No.5 9682 0 0 3 )
中国科学院离子束开放研究实验室课题资助项目
