摘要
主要介绍金刚石薄膜在Si上异质外延的研究状况。综述了外延金刚石薄膜的偏压形核 ,SiC过渡层的影响及一些实验参数对外延薄膜质量的影响等 。
The status in the researches on synthesizing heteroepitaxial diamond thin films on silicon is introduced. Bias enhanced nucleation,action of SiC in film deposition and effect of different parameters on qualities of heteroepitaxial are summarized.Some problems that worth further researches in this field are presented.
出处
《真空与低温》
2002年第2期71-76,共6页
Vacuum and Cryogenics
