摘要
本文研究了在薄二氧化硅层上快速热退火 (RTA)形成的多晶硅化镍膜的电特性。对于在薄二氧化硅上的纯硅化镍膜 ,测试了其到衬底的泄漏电流 ,发现二氧化硅性质仍类似于多晶硅膜或纯铝膜下二氧化硅性质。采用准静态C V方法研究了多晶硅栅和纯硅化镍栅的多晶栅耗尽效应 (PDE) ,并探讨了硅化镍栅掺杂浓度和栅氧化层厚度对PDE的影响。结果表明 :即使在未被掺杂的纯硅化镍栅膜 ,也未曾观察到PDE。
Polycrystalline nickel silicide film formed on thin oxide by rapid thermal annealing (RTA) has been investigated by capacitance voltage ( C V ) measurements. XPS analysis was made for checking the silicide phase and nickel diffusion in oxide. For pure silicide film on thin oxide, the leakage current from the gate film to the substrate is also measured and found that the quality of the oxide is simiar to that of polysilicon or pure Al film. For comparison, the poly gate depletion effect (PDE) of polysilicon gate and pure nickel silicide gate is investigated by quasi static C V . The effect of poly doping and gate oxide thickness on PDE is studied too. Our results show that no PDE was observed from the pure gate silicide film even the film is undoped.
出处
《电子器件》
CAS
2002年第2期157-159,共3页
Chinese Journal of Electron Devices
