摘要
应用 2 52 Cf源和60 Coγ源进行单粒子翻转截面与γ累积剂量的关系研究 ,实验结果表明 ,静态加电和不加电状态下 ,γ累积剂量对单粒子翻转截面的影响不大 ,无明显的规律。动态测量状态下 ,在存储单元中写入相同数据时 ,器件的单粒子翻转截面随累积剂量的增加而增大。在实验中把存储单元中的数据相反 ,会使器件的单粒子翻转截面恢复到未经 60 Coγ源辐照时的水平 ,甚至更低 。
Experiments were done under 252 Cf and 60 Co γ source to study the relation between heavy ion Single Event Upset (SEU) cross sections and γ accumulated doses. There was no obvious rule and little influence of γ accumulated doses on SEU cross sections when Static Random Access Memories were in power off mode static power on mode. In active measuring mode, the SEU cross section increased as the accumulated doses increased when same data were written in memory cells. If reverse data, such as '55' and 'AA' , were written in memory cells during the experiment, the SEU cross sections decreased to the level when memories were not irradiated under 60 Co γ source, even more small . It implied that the influence of γ accumulated doses on SEU cross sections can be set off by this method.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2002年第3期228-230,256,共4页
Nuclear Electronics & Detection Technology
