摘要
在半导体器件生产过程中 ,器件的引线大都是由蒸镀的方法来解决的。蒸镀不仅能制备引线 ,同时也是传感器件敏感膜制作的主要手段。但蒸镀中常常发现膜厚度不均匀 ,影响膜厚的因素很多 ,实际生产中 ,陪片由于与其它正片的几何位置不同 ,因此膜厚不同。其差别可达 1%～ 2 0 %,但在大量的文献分析及应用中被忽略。针对两种常见的蒸发源 ,通过理论计算与实验给出了陪片、基片与蒸发源的最佳位置 ,使误差可控制在 1%,甚至 0 .1%。
During producing semiconductor device,it is prepared by evaporating to most of device leader.Evaporating not only can prepared leader,but also is the main means to make sense film of sensor components.The thickness of film is frequent non-uniform, and factors are a good many,In practice,the negative films differ from other positive films in geometric position,so the thickness of films are different,and the difference can extend to 1%～20%.But it is ignored in most of literatures.To two common evaporation sources,we obtain the best position of negative films, positive films and evaporation sources by theoretical calculating and experiments which makes the difference extend to 1%,even zero point one percent.
出处
《传感器技术》
CSCD
北大核心
2002年第5期8-10,共3页
Journal of Transducer Technology
基金
黑龙江省自然科学基金资助项目 (E982 9)
关键词
真空镀膜
蒸发源位形
膜厚均匀性
vacuum evaporation
shape and position of the evaporative source
uniformity of the film thickness
