摘要
分析研究了GaAs InAs自组装量子点的电输运性质 ,通过对实验数据的分析 ,讨论了Schottky势垒对InAs量子点器件的影响和I V曲线中迟滞回路以及电导曲线中台阶结构产生的原因 .迟滞回路和台阶的出现与电场中量子点的充放电过程相关 :迟滞回路反映了量子点充电后对载流子的库仑作用 ,而电导台阶则反映了量子点因共振隧穿的放电现象 .
The properties of current transport in InAs/GaAs self-assembled quantum dots and the influence of schottky diode are investigated. Hystereses and steps contact with charging and discharging of electrons in the quantum dots. Hystereses are arising from the charged quantum dots that block electrons. All the steps are arising from that the electrons resonant tunnel out of the quantum dots. The electrons that come out of quantum dots affect the current transport.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2002年第6期1355-1359,共5页
Acta Physica Sinica
基金
国家自然科学基金 (批准号 :6 992 5 410和 19990 40 15 )资助的课题~~
