摘要
建立了一个价带附近的界面态密度分布模型 ,并用该模型较好地模拟了 6 H- Si C PMOS器件的阈值电压随温度变化的趋势、C- V特性以及转移特性 .理论 C- V特性曲线是用数值解泊松方程的方法得到的 ,在解泊松方程的过程中考虑了场致离化效应 .由于 Si C PMOS器件的源漏电阻比较大 ,因此 ,在计算强反型情况下的漏电流时 ,同时考虑了源漏电阻的影响 .结果表明 。
A m odel of the interface state density distribution near by valence band is presented.The dependence of the thresh- old voltage on temperature,C- V characteristics and the transfer characteristics for 6 H - Si C PMOS devices is predicted exactly with this m odel.Theoretical C- V curve is obtained by calculating the Poisson equation num erically considering the effects of field- induced ionization.The sheet resistances and contact resistances for p+- type Si C source/drain region are significantly high,so they m ust be considered when the drain current in strong inversion is calculated.
