摘要
从非平衡载流子的扩散 -复合理论出发 ,提出 PIN多结探测器材料结构 ,并建立了理论模型进行定量计算 ,从理论上解决了不能同时兼顾增大量子效率与光电增益和降低噪声的矛盾。利用该模型对 Ga In As Sb材料体系作了数值模拟 ,单结器件性能的计算值和实测值基本吻合 ,并根据多结器件模拟结果设计了工作于2 .4μm波段的 Ga In As Sb
A method of fabricating multi junction photovoltaic detector to improve the performance of detectors and a general model of describing the ultimate performance of multi junction PIN photovoltaic infrared detectors starting from non equilibrium carriers diffusion recombination theory are presented and a material construction for GaInAsSb multi junction PIN photovoltaic infrared detectors operating at the wavelength of 2.4 μm at room temperature is designed. Using this theoretical model, some numerical simulations are carried out and it is found that the performance of single junction device nears the performance of real devices reported by some references and fabricated by ourselves and the multi junction can make the device achieve much better performance.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2002年第1期114-119,共6页
Research & Progress of SSE
基金
国家 8 63高技术研究基金 (课题编号 863 -715 -0 0 1-0 15 2 )资助项目
