摘要
运用依赖能量的异质界面δ散射势和多能谷有效质量方程计算了 Ga As/Al As异质结构中的能带混合和电子隧穿共振。结合能带混合隧穿共振理论和 Monte Carlo模拟计算 ,编制异质谷间转移电子器件的模拟软件。用该软件模拟了器件的直流伏安特性和射频工作。由模拟结果与测量结果的对比中确定出δ散射势参数和隧穿时间。通过模拟发现了新的弛豫振荡模式。研究了弛豫振荡模的各种振荡特性 。
By using an energy-dependent δ potential at the heteroconjunction interfaces and effective mass equation with many valleys, the band mixing and resonant tunneling in GaAs/AlAs heterostructure is calculated. A software to simulate the electron moving in hetereostructure intervalley transferred electron devices is written down through the combination of energy band mixing theory and Monte Carlo simulation. The dc V-I characteristic and rf operation process are calculated by this software. We determine the δ potential parameter and the tunneling time through heterostructure from the comparison between the simulation result and measurement data. A new relaxation oscillation mode is found through the dynamic simulation. Many oscillation characteristics of the relaxation mode are investigated, from which an optimized design is given.
出处
《固体电子学研究与进展》
EI
CAS
CSCD
北大核心
2002年第1期32-37,共6页
Research & Progress of SSE
基金
国家自然科学基金资助课题 (696760 2 2 )
