摘要
采用等离子增强化学气相沉积 (PECVD)方法成功的沉积出掺杂(主要是磷、硼 )纳米硅薄膜 .探讨了各种生长工艺条件对掺杂纳米硅薄膜的结构与性能的影响及其规律 .利用高分辨电镜 (HREM)、Raman散射等手段对掺入不同杂质后的纳米硅薄膜的微结构进行初步研究 ,并从实验和理论上对掺杂纳米硅薄膜的生长特性进行了探讨 .得出掺杂纳米硅薄膜具有与掺杂非晶硅薄膜和掺杂微晶硅薄膜不同的生长特性 ,即杂质原子绝大部分是非活性的 ,只有很少一部分在薄膜中起施主作用 .
B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) were generated by plasma enhanced chemical vapor deposition (PECVD). Effects of technique parameters on the microstructure and physical properties of the films were examined. The microstructure of the nc-Si:H films were studied by means of high resolution electron microscopy (HREM) and Raman scattering. The growth characteristics of doped nc-Si:H films were discussed based on theory and experiments. It is conclude that both the growth and the doping mechanism of doped nc-Si:H films are different form those of μc-Si:H and a-Si:H. In the growing process of nc-Si:H films, most of the inclusion atoms are inactive and present at grain boundaries.
出处
《北京航空航天大学学报》
EI
CAS
CSCD
北大核心
2002年第2期181-185,共5页
Journal of Beijing University of Aeronautics and Astronautics
基金
国家博士后科学基金项目资助
留学回国人员科研启动基金项目资助 ( 2 0 0 2 9)
关键词
生长特性
纳米硅薄膜
杂质
制备
工艺参数
Film growth
Microstructure
Nanostructured materials
Plasma enhanced chemical vapor deposition
Silicon
