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InAlAsInGaAs HEMT跨阻前置放大器的设计与实现 被引量:2

Design and realization of an InAlAs/InGaAs HEMT transimpedance amplifiers
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摘要 提出了基于耗尽型InAlAs InGaAsHEMT器件的光纤通信接收机中的单电源跨阻前置放大器电路 ,并给出了设计方法与实验结果 .该前置放大器采用单电源供电 ,单端输入 ,双端差动输出 ,由两级源级跟随器 ,一级输出级以及一个反馈电阻组成 .当前置放大器工作在 2 .5Gbit s时 ,跨阻可达 62 .5dBΩ .采用 + 5V电源供电 ,功耗为 2 This paper presents a depletion InAlAs/InGaAs HEMT-based single supply transimpedance amplifier circuit for optical communication receiver. It is composed of an amplifier stage, two stages of source follower, an output stage and a feedback resistance. The schemes of single supply voltage, single-ended input and differential output are adopted in the circuit. While operating at 2.5 Gbit/s, the preamplifier shows a transimpedance of 62.5 dbΩ. The chip consumes 272 mW at a single + 5 V supply voltage.
出处 《东南大学学报(自然科学版)》 EI CAS CSCD 北大核心 2002年第1期46-49,共4页 Journal of Southeast University:Natural Science Edition
基金 国家 8 63计划资助项目 (863 -3 0 7-15 -3 -0 5 )
关键词 InAlAs/InGaAsHEMT 光接收机 前置放大器 工艺 光纤通信接收机 设计 High electron mobility transistors Integrated circuits Optical fibers Technology
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