摘要
Phosphor materials have been rapidly developed in the past decades. Developing phosphors with desired properties including strong luminescence intensity and long lifetime has attracted widespread attention. Herein, we show that hetero-valence ion doping can serve as a potent strategy to manipulate luminescence in persistent phosphors by controlling disorder in the host lattice. Specifically, spinel phosphor Zn(Ga_(1-x)Zn_x)(Ga_(1-x)Ge_x)O_4:Cr is developed by doping ZnGa_2O_4:Cr with tetravalent Ge^(^(4+)).Compared to the original ZnGa_2O_4:Cr, the doped Zn(Ga_(1-x)Zn_x)(Ga_(1-x)Ge_x)O_4:Cr possesses significantly enhanced persistent luminescence intensity and prolonged decay time. Rietveld refinements show that Ge^(4+)enters into octahedral sites to substitute Ga^(3+), which leads to the co-substitution of Ga^(3+) by Zn^(2+) for charge compensation. The hetero-valence substitution of Ga^(3+) by Ge^(4+)and Zn^(2+) enriches the charged defects in Zn(Ga_(1-x)Zn_x)(Ga_(1-x)Ge_x)O_4:Cr, making it possible to trap large amounts of charge carriers within the defects during excitation. Electron paramagnetic resonance measurement further confirms that the amount of Cr^(3+) neighboring charged defects increases with Ge^(4+)doping. Thus charge carriers released from defects can readily combine with the neighboring Cr^(3+) to produce bright persistent luminescence after excitation ceases. The hetero-valence ion doping strategy can further be employed to develop many other phosphors and contributes to lighting, photocatalysis and bioimaging.
Phosphor materials have been rapidly developed in the past decades. Developing phosphors with desired properties including strong luminescence intensity and long lifetime has attracted widespread attention. Herein, we show that hetero-valence ion doping can serve as a potent strategy to manipulate luminescence in persistent phosphors by controlling disorder in the host lattice. Specifically, spinel phosphor Zn(Ga_(1-x)Zn_x)(Ga_(1-x)Ge_x)O_4:Cr is developed by doping ZnGa_2O_4:Cr with tetravalent Ge^(^(4+)).Compared to the original ZnGa_2O_4:Cr, the doped Zn(Ga_(1-x)Zn_x)(Ga_(1-x)Ge_x)O_4:Cr possesses significantly enhanced persistent luminescence intensity and prolonged decay time. Rietveld refinements show that Ge^(4+)enters into octahedral sites to substitute Ga^(3+), which leads to the co-substitution of Ga^(3+) by Zn^(2+) for charge compensation. The hetero-valence substitution of Ga^(3+) by Ge^(4+)and Zn^(2+) enriches the charged defects in Zn(Ga_(1-x)Zn_x)(Ga_(1-x)Ge_x)O_4:Cr, making it possible to trap large amounts of charge carriers within the defects during excitation. Electron paramagnetic resonance measurement further confirms that the amount of Cr^(3+) neighboring charged defects increases with Ge^(4+)doping. Thus charge carriers released from defects can readily combine with the neighboring Cr^(3+) to produce bright persistent luminescence after excitation ceases. The hetero-valence ion doping strategy can further be employed to develop many other phosphors and contributes to lighting, photocatalysis and bioimaging.
基金
supported by the National Key R&D Program of China (2017YFA0208000)
the National Natural Science Foundation of China (21675120, 21325104)
the CAS/SAFEA International Partnership Program for Creative Research Teams
