摘要
为了提高大功率磁控管阴极的耐电子轰击性能,首次采用Y_2O_3-Gd_2O_3-HfO_2(Y-Gd-Hf-O)掺杂金属W粉制备大功率磁控管用直热式阴极。对不同质量分数Y-Gd-Hf-O掺杂W基直热式阴极的热发射及耐电子轰击特性进行了研究。实验结果显示,50%Y-Gd-Hf-O掺杂W基直热式阴极具有较大的热发射能力,1500℃工作温度下即可提供1.0A/cm^2的拐点发射电流密度。10%Y-Gd-Hf-O掺杂W基直热式阴极具有较好的耐电子轰击性能,经过14 W/cm^2电子连续轰击200 h后,热发射电流密度仅下降0.1 A/cm^2。最后,对Y-Gd-Hf-O掺杂W基直热式阴极热发射及耐电子轰击机理进行了有益的探讨。
In order to improve the anti-electron-bombing performance of the cathode applied in high-power magnetron tube,a method of Y2O3-Gd2O3-HfO2(Y-Gd-Hf-O)doped metallic W powders was used to prepare direct-heated cathode.The thermionic emission and anti-electron-bombing characteristics of Y-Gd-Hf-O doped cathode with different mass fractions were investigated.Experimental results show that the 50% Y-Gd-Hf-O doped cathode has large thermionic emission performance,which can provide 1.0A/cm^2 knee-point emitted current at 1500℃.The 10% Y-Gd-Hf-O doped cathode has good anti-electron-bombing capability,whose thermionic emission current density has merely fallen by 0.1A/cm^2 after 200h continuous 14W/cm^2 electron bombing.At last,the thermionic emission and anti-electron-bombing mechanisms of the Y-Gd-Hf-O doped cathode were discussed reasonably.
作者
漆世锴
王小霞
罗积润
胡明炜
李云
Qi Shikai;Wang Xiaoxia;Luo Jirun;Hu Mingwei;Li Yun(Key Laboratory of High Power Microwave Sources and Technologies,Institute of Electronics, Chinese Academy of Sciences,Beijing 100190,China;University of Chinese Academy of Sciences,Beijing 100049,China)
出处
《稀有金属材料与工程》
SCIE
EI
CAS
CSCD
北大核心
2018年第12期3784-3788,共5页
Rare Metal Materials and Engineering
基金
国家重点基础研究发展计划("973"计划)(2013CB328901)
国家自然科学基金(11305177)
关键词
直热式阴极
磁控管
热发射
耐电子轰击
发射机理
directly-heated cathode
magnetron
thermionic emission
anti-electron-bombing
emission mechanism
