摘要
Skyrmion, as a quasi-particle structure, has attracted much attention due to its potential applications in future spintronic devices. Artificial skyrmion structure has aroused great interest as it can be stabilized at room temperature, without needing to incorporate materials with Dzyaloshinskii–Moriya interaction(DMI) into it. In this paper, it is found that the artificial skyrmion structure can be realized in CoCrPt/NiFe bilayers by micromagnetic simulations. The critical magnetic field of the core decreases as the diameter of the NiFe soft magnetic layer increases. The artificial skyrmion has excellent topological protection, and the critical magnetic field of plane is about 76 mT(760 Oe, 1 Oe = 79.5775 A·m-1). The external magnetic field plays a key role in determining the core diameter of the skyrmion, and the artificial skyrmion can be realized in CoCrPt/Cu/CoCrPt/NiFe four-layer with a diameter of 13 nm.
Skyrmion, as a quasi-particle structure, has attracted much attention due to its potential applications in future spintronic devices. Artificial skyrmion structure has aroused great interest as it can be stabilized at room temperature, without needing to incorporate materials with Dzyaloshinskii–Moriya interaction(DMI) into it. In this paper, it is found that the artificial skyrmion structure can be realized in CoCrPt/NiFe bilayers by micromagnetic simulations. The critical magnetic field of the core decreases as the diameter of the NiFe soft magnetic layer increases. The artificial skyrmion has excellent topological protection, and the critical magnetic field of plane is about 76 mT(760 Oe, 1 Oe = 79.5775 A·m^(-1)). The external magnetic field plays a key role in determining the core diameter of the skyrmion, and the artificial skyrmion can be realized in CoCrPt/Cu/CoCrPt/NiFe four-layer with a diameter of 13 nm.
基金
Project supported by the National Key Research and Development Program of China(Grant No.2018YFF01010701)
the National Natural Science Foundation of China(Grant No.51332003)
the Sichuan Science and Technology Program,China(Grant No.2018G20140)
