摘要
抛光后的局部平整度(SFQR)参数是表征硅片抛光质量的重要指标之一,也是抛光过程较难优化的几何参数之一。分析了不同的化学腐蚀处理对抛光后局部平整度的影响。实验结果表明,不同的腐蚀处理方式会产生不同的表面状态,进而影响抛光后的局部平整度,抛光后SFQR与腐蚀片总厚度差(TTV)以及平整度(TIR)呈现出了一定的相关性。酸腐蚀去除量越大,腐蚀后的TTV以及TIR参数越差,硅片表面局部起伏也越剧烈,相应地,抛光后的SFQR也有逐渐增大的趋势。碱腐蚀硅片表面局部起伏较小,因此能获得较好的抛光后SFQR参数;而酸腐蚀硅片表面局部起伏剧烈,抛光后SFQR相对较大。KOH碱腐蚀与Na OH碱腐蚀会产生不同的表面粗糙度Ra,但是抛光后SFQR分布情况差异不大。目前实验研究表明抛光后SFQR受抛光前的粗糙度起伏Ra影响不大,而主要受反映硅片表面轮廓的较为宏观的起伏影响。
SFQR( site flatness front least square range) value is one of the most important geometric parameters to characterize the quality of polished wafers,and it is also one of the most difficult parameters to optimize. This paper analyzed the effect of different chemical etching treatments on the SFQR of as-polished wafers. The experimental results showed that different etching treatments produced different surface conditions,which could affect the subsequent polishing process and in turn affected the SFQR of polished wafers. The polished wafer’s SFQR had a certain correlation with TTV and TIR of as-etched wafers. With the increase of acid etching removal amount,TTV and TIR of as-etched wafers became worse and the local fluctuations of the surface became severe,and correspondingly,the polished wafer’s SFQR also tended to deteriorate gradually. Caustic etching could obtain relatively small local fluctuations of the wafer’s surface,and it could get better polished wafer’s SFQR. While the local fluctuation of the surface by acid etching was more severe,the SFQR was relatively poor. Caustic etching process with different etching etchants caused different surface roughness,but there was no significant difference in the distribution of polished wafer’s SFQR. The present experimental results showed that the SFQR of polished wafer was not affected much with the etched wafer’s Ra,but it was mainly affected by the macroscopic fluctuation of the surface profile.
作者
钟耕杭
宁永铎
王新
路一辰
周旗钢
李耀东
Zhong Genghang;Ning Yongduo;Wang Xin;Lu Yichen;Zhou Qigang;Li Yaodong(General Research Institute for Nonferrous Metals,Beijing 100088,China;GRINM Semiconductor Materials Co.,Ltd.,Beijing 100088,China)
出处
《稀有金属》
EI
CAS
CSCD
北大核心
2018年第11期1186-1192,共7页
Chinese Journal of Rare Metals
基金
国家科技重大专项项目(2010ZX02302001)资助
