摘要
对可达到 2 .5～ 40 Gb/s数据速率的 Si Ge与 Ga As和 In P材料进行了比较 。
The comparison of SiGe vs GaAs and InP materials for 2 5～40Gb/s data rate has been made in this paper.The typical features about these materials and processes are also analyzed.
出处
《半导体情报》
2001年第6期8-12,共5页
Semiconductor Information
