摘要
用金属蒸气真空弧离子源 (MEVVA)制备高浓度掺铒硅发光薄膜 ,研究高浓度Er掺杂发光薄膜中Er的偏析与沉淀现象对 1 5 4μm光发射的影响。RBS分析表明 ,Er的掺杂浓度可达～ 10 % (原子分数 ) ,即Er原子体浓度为 1× 10 2 1 cm- 3 。XRD分析掺铒硅薄膜的物相结构发现 ,Er在薄膜中的存在形式与离子注入参数有关。Er的偏析、沉淀以及辐照损伤等因素会影响掺铒硅薄膜的 1 5 4μm光发射。
Er doped silicon thin films were synthesized using metal vapor vacuum arc (MEVVA) ion source. Er concentrations in as implanted sample were attained to 10%(atomic fraction) corresponding to 1×10 21 cm -3 . The solubility, segregation and precipitation behaviors of Er in Er doped silicon are closely related to ion implantation parameter. 1 54 μm light emitting signals from Er doped Si thin films are influenced by such the factors as Er segregation, precipitation and irradiation damage etc.
出处
《中国稀土学报》
CAS
CSCD
北大核心
2002年第1期68-71,共4页
Journal of the Chinese Society of Rare Earths
基金
国家自然科学基金项目 ( 6 976 6 0 0 1)
复旦大学应用表面物理国家重点实验室基金资助项目
