摘要
采用电子束蒸发法制备了一种新结构 (ITO/SiO2 /ZnS∶TmF3/SiO2 /ZnS∶TmF3/SiO2 /Al)的薄膜电致发光器件 ,并与传统双绝缘层结构的器件相比较。结果表明 ,新结构器件的发光蓝红外比和发光亮度要明显高于双绝缘层结构的器件。分析认为这是由于SiO2
In order to increase the blue emitting of ZnS∶Tm 3+ TFEL devices, a new ZnS∶TmF 3 TFEL device with the structure of ITO/SiO 2/ZnS∶TmF 3/SiO 2/ZnS∶TmF 3/SiO 2/Al was prepared by e beam evaporation method. The EL emission spectra show that the brightness of the new structure device greatly increase compared with that of the conventional double insulator structure device, and the ratio between blue emission and infrared emission of the new structure device also enhance. This is ascribed to the electron accelerating action of the SiO 2 interlayer and the ZnS/SiO 2interface offered by the interlayer.
出处
《中国稀土学报》
CAS
CSCD
北大核心
2001年第6期583-585,共3页
Journal of the Chinese Society of Rare Earths
基金
国家自然科学基金资助项目 (5 9982 0 0 1)
北京市自然科学基金资助项目 (4 0 12 0 10 )
