摘要
通过理论分析和实验研究,找出了影响 ZQ 正向饱和压降的主要因素,提出了改进 ZQ 正向饱和压降的可行性措施:减薄高阻区厚度,提高合金温度等.取得了较显著的效果.
The principal factor which influences the forward saturated voltage-drop of ZQ has been found by means of theoretical analysis and some experimental researches.The feasible measures of improving forward saturated voltage- drop of ZQ are proposed,which contains reducing the thickness of high- resistivity zone and increasing the temperature of the alloy,having obtained obvious effects.
出处
《河北工学院学报》
1989年第1期49-53,共5页
Journal of Hubei Polytechnic University
关键词
ZQ
正向饱和压降
电子整流元件
Forward saturated voltage—drop
Life time of minority carriers
Conductive modulation
