摘要
本文首先简要分析了 MOSFET阈值电压随温度的变化率 ,讨论了影响阈值电压温度特性的主要因素——体费米势的温度特性 ,最后给出了一种比较精确的线性拟合模型 。
The temperature dependent variation rates of the threshold voltages for MOSFET are analyzed first. The temperature characteristics of the Fermi potential--one of the main factors that influence the temperature characteristics of the threshold voltage-- are discussed. At last, a more accurate linear fitting model is presented and the model is verified through simulation
出处
《电子器件》
CAS
2001年第4期314-317,共4页
Chinese Journal of Electron Devices
基金
国家自然科学基金重点项目 (批准号 :6 9736 0 2 0 )
关键词
体费米势
温度特性
硅
宽温区
fermi potential
\ temperature characteristics
\ model
