摘要
等离子增强化学气相淀积 (PECVD)制备高品质氢化非晶硅 (HQ a- Si∶ H)工艺中 ,射频(rf)功率密度 / Si H4流速率匹配 (Pd/ fr)的研究已有许多报道 ,但至今并无明确的结论。文中根据传统的 Si H4辉光放电分解 (CPECVD)制备 HQ a- Si∶ H必须满足三个基本的化学物理要求 ,已经导出 Pdn/ fr(1<n<2 )的一个解析表示式 ,它是 Si H4气压 / Si H4流速率比 (Pr/ fr)、电极间距 (D)、Pd和 n的函数 ,而且还受到衬底温度 (Ts)的限制。这表示 ,在 CPECVD工艺中不存在独立的 Pd/
The matching research about rf power density/SiH 4 flow rate ( P d/ f r) in the PECVD process used for the preparation of high quality hydrogenated amorphous silicon (HQ a Si∶H) has been reported repeatedly, but, up to now, there is still no definite conclusion. On the basis of three elemental chemistry physics requirements preparing HQ a Si∶H by the conventional SiH 4 glow discharge decomposition PECVD (CPECVD) process, we have deduced an analytical expression of P d n / f r(1< n <2) which is a function of the SiH 4 pressure/SiH 4 flow rate ratio ( P r/ f r), electrodes spacing ( D), P d and n , furthermore, limited by the substrate temperature ( T s). This means that an independent P d/ f r matching does not come into existence in CPECVD process.
出处
《固体电子学研究与进展》
CAS
CSCD
北大核心
2001年第4期453-459,共7页
Research & Progress of SSE
关键词
氢化非晶硅
等离子增强化学气相淀积
匹配
工艺
amorphous silicon
conventional PECVD
rf power density/SiH 4 flow rate matching (P d/f r)
