摘要
在弱碱性介质里以铁氰化钾为钝化剂 ,对铜化学机械抛光技术 (CMP)过程中的电化学行为进行了在线测试。考察了铜在有无铁氰化钾存在下的极化行为及铁氰化钾浓度对腐蚀电位的影响 ,研究了在不同压力下铜抛光前后的腐蚀电位 (φE)和腐蚀电流密度 (Jc)的变化规律 ,比较了抛光前及抛光过程中铜极化曲线的变化。定性地通过成膜的快慢及抛光过程中腐蚀电流密度的大小来说明抛光速率的高低。证明了以弱碱性溶液为介质、铁氰化钾为成膜剂、纳米γ Al2 O3 为磨粒的CMP配方的可行性。
Electrochemical behaviours of copper during CMP were measured in situ in weak alkaline media with potassium ferricyanide as passivator. Polarization behaviour of copper in or without presence of K 3Fe(CN) 6 and influence of K 3Fe(CN) 6 content on φ c were investigated. Changing rules of φ c and J c were studied after or before copper CMP under various pressures. Changes of polarization curves after and before polishing were compared. Polishing rate was explained quilitatively by formation rate of films and J c during polishing. A CMP recipe of potassium ferricyanide as passivator and nano sized γ Al 2O 3 as abrasives in weak alkaline media was confirmed reasonable.
出处
《中国有色金属学报》
EI
CAS
CSCD
北大核心
2001年第6期1140-1143,共4页
The Chinese Journal of Nonferrous Metals
基金
国家杰出青年科学基金资助项目 ( 5 992 5 12 )
湖南省优秀中青年科技基金资助项目 ( 98JZY2 16 7)
关键词
铜
化学机械抛光
电化学行为
弱碱性抛光液
copper
chemical mechanical polishing(CMP)
electrochemistry behaviour
