摘要
室温下使用MeV能量级Si,F和O离子对 5keVB离子预注入后的n -型单晶Si( 1 0 0 )进行了辐照 ,应用二次离子质谱仪测试分析了掺杂物B原子的分布剖面及其变化 .结果表明 ,高剂量Si,F和O离子的附加辐照可以抑制热激活退火中B原子发生的瞬间增强扩散 .在相同的辐照条件下 ,Si近表面区域中SiO2层的存在更有助于限制B原子的瞬间增强扩散 .
N-type crystalline Si (100) implanted with 5keV B ions was subsequently irradiated with MeV Si, O and F ions. The B atom profiles were measured by means of secondary ion mass spectrometer after the treatment of rapid thermal annealing. The results show that the transient enhanced diffusion of B atoms is effectively limited by the post-implantation of high energy ions at high dose. At the same irradiation conditions, it is found that the existence of a SiO 2 layer in the near surface of Si is even more effective in suppressing the transient enhanced diffusion of the doped B atoms. The results are qualitatively discussed in combination with the analyses of RBS/c measurements and calculation of the DICADA code.
出处
《高能物理与核物理》
EI
CSCD
北大核心
2001年第12期1238-1244,共7页
High Energy Physics and Nuclear Physics
基金
英国皇家学会奖学金资助~~
