摘要
用自制的变频C-V和G-V测试系统研究了二极对管的C-V特性及其随频率变化的关系.发现结电容随频率的降低而明显增大,并伴有反常的尖峰出现.分析表明,半导体中的深能级杂质在低频下对结电容有显著影响.本文中还探讨了结电导—电压特性以及结电导对结电容测量的影响.
Using the slef-made variable-frequency C-V and G-V measuring system, we studied the capacitance-voltage characteristics of pair diode with frequency as parameter. We found the junction capacitance increased significantly as the frequency decreased and the anomalous peak arose. The analysis shows that the deep level impurities in the semiconductors have the obvious influence on the junction capacitance at low frequencies. We also studied the junction conductance-voltage characteristics as well as the influence of junction conductance on the junction capacitance measurements.
出处
《南京邮电学院学报》
北大核心
1991年第3期52-56,共5页
Journal of Nanjing University of Posts and Telecommunications(Natural Science)
关键词
二极对管
变频
二极管
G-V
C-V
Diode
Capacitance measurement
Conductance measurement
