摘要
镓锡合金沉积于铝阳极表面 ,形成活化点 ,是铝阳极活化的根本原因 .简单的Al_Sn、Al_Ga二元合金在碱性介质中不能活化 .Al_Sn_Ga多元合金阳极溶解时 ,Ga、Sn溶解进入溶液 .锡离子首先还原沉积于铝阳极表面 ,镓离子又在沉积的锡上沉积 ,在铝合金阳极表面不断形成Ga_Sn合金活性点 .低溶点的合金由于其良好的流动性 ,以单个或多个原子的形式嵌入氧化膜 ,形成活性点 ,起到了局部分离氧化膜的作用 。
The major reason for Al_anode's activation is that Ga and Sn deposit on the aluminum surface and form activated points. The Al_Sn and Al_Ga binary alloys can't be activated in alkaline medium. During the dissolution of the Al_Sn_Ga ternary anode, Sn and Ga dissolve into the solution and transform into ions. After the Sn ions deposit on the surface of Al_anode, the Ga ions will deposit on Sn. The higher activation of the polynary alloy anode is caused by much more new activated points composed of Ga_Sn alloy being continually formed. Ga_Sn alloy with low melting point deposited on the surface of Al can implant in the oxide film with single or multi_atoms because of their fluidity, and form active points which can separate oxide film locally. This is the key for activation of Al alloy.
出处
《电化学》
CAS
CSCD
2001年第3期316-320,共5页
Journal of Electrochemistry
