摘要
用微电子工艺制备了 V O2 溅射薄膜红外探测器 ,在 2 96 K的环境温度中测试了该探测器对 8- 12 μm红外辐射的黑体响应率和噪声电压 ,结果显示该探测器在调制频率为 30 Hz时可以实现探测率 D*=1.89× 10 8cm H z1 /2W- 1 ,热时间常数 τ=0 .0
An uncooled bolometer based on VO2 thin films deposited by reactive ion-beam sputtering was fabricated. The noise and responsivity for the spectral range 8-12 mum were measured at 296K. At the chopper frequency of 30Hz, the device having a detectivity D* of 1.89 X 10(8)cmHz(1/2)W(-1) and a thermal time constant of 0.011s was realized.
出处
《红外与毫米波学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第2期136-138,共3页
Journal of Infrared and Millimeter Waves
基金
国家高技术863基金!资助项目&&
