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Si-C-O-N系统相稳定性和相稳定性图 被引量:1

PHASE STABILITY AND PHASE STABILITY DIAGRAMSOF THE Si-C-O-N SYSTEM
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摘要 对Si-C-O-N系统进行了平衡状态下的相稳定性计算,绘制了在1473K和1573K下的Si3N4、SiC、Si2N2O和SiO2相稳定性与N2分压和O2分压的关系图以及N2分压和SiO分区的关系图,Si3N4/Si2N2O/SiC、SiO2/Si2N2O/SiC两个三固相平衡点与N2分压、O2分压和SiO分压以及温度的函数关系日。并以此确定C纤维-SiC纤维转变和C纤维上涂层SiC过程中,为获得稳定SiC相的气体分压。 The phase stability in equilibrium of the Si-C-O-N system was calculated. The phase stability diagrams for the Si3N4,SiC,Si2N2O and SiO2 at 1473K and 1573K were constructed as a function .of N2 and O2 partial pressures, and of N2 and SiO partial pressures. The diagrams which showthe changes in equilibrium N2,O2 and SiO partial pressures at invariant points (Si3 N 4 /Si2 N2 O /SiC andSiO2,/Si2N2O/SiC) as a fuction of temperatures were also given. From the phase stability calculationand phase stability diagrams, the Partial pressures of the gaseous phases can be defined, which areneeded to obtain a stable SiC phase in the processes of carbon fiber-SiC fiber conversion and coatingSiC on the carbon fibers.
作者 凌志达
出处 《南京化工学院学报》 1994年第1期33-39,共7页
基金 国家自然科学基金
关键词 Si-C-O-N系统 相稳定性 气体分压 相稳定性图 陶瓷 Si-C-O-N system phase stability partial pressure of gaseous phase.
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  • 1Hyoun -- Ee Kim, Moorhead A J. High -- Temperature gaseous corrosion of Sia N4 in Hz- H20 and Ar--O5 environ- ments. J Am Ceram Soc,1990,73(10) : 3 007-3 010. 被引量:1
  • 2Nathan Jaeobson S, Andrew Eckel J,Ajay Misra K, et al. Reactions of SiC with H2/HzO/Ar mixtures at 1 300 C. J Am Ceram Soc, 1990,73(8) :2 330-2 332. 被引量:1
  • 3Levy R A, Chen L, Grow ] M, Yu Y. A comparative study of plasma enhanced chemically vapor deposited Si-- O-- H and Si--N--C--H films using the environmentally benign precur- sor diethylsilane. Materials Letters, 2002,54 : 102 - 107. 被引量:1
  • 4Hanadi Ghanem, Nadejda Popovska, Helmut Gerhard. Processing of biomorphic Si3 N4 ceramics CVI--R technique with SiCh/Hz/N2 system. J Eur Ceram Soc,2007,27:2 119-2 125. 被引量:1
  • 5陈肇友.化学热力学与耐火材料.北京:冶金工业出版社,1999. 被引量:1
  • 6陈肇友.Si-C-O复杂体系中的化学反应[J].耐火材料,2003,37(6):311-315. 被引量:7

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