摘要
采用蒸发硒化方法制备了P型CIS(铜铟硒 )和CIGS(铜铟镓硒 )薄膜 ,用蒸发法制备N型CdS(硫化镉 ) ,二者组成异质PN结太阳电池。经退火处理 ,CIS和CIGS薄膜太阳电池的效率分别达到 8 83 %和 9 13 %。对制膜过程中衬底的选择 ,背电极的制备 ,CIS各元素蒸发控制和镓的掺入等工艺技术问题进行了深入的讨论 。
P type CIS (abbreviation of CuInxSe2) and CIGS (abbreviation of CuIn1-xGaxSe2) thin films were fabricated by evaporating selenylation method, and so are N type CdS. They compose heterogeneous PN junction solar cell. After annealing, the cell efficiencies reach 8.83% and 9.13% respectively. CIS fabricating technology and key problems were discussed. The opinions about annealing were given.
出处
《太阳能学报》
EI
CAS
CSCD
北大核心
2001年第2期192-195,共4页
Acta Energiae Solaris Sinica
基金
天津市自然科学基金资助项目 !(9936 0 3711
关键词
CIGS薄膜
太阳电池
转换效率
CIS
Annealing
Copper compounds
Semiconductor junctions
Thin films
