摘要
对HgCdTe晶片的研磨和抛光 ,不可避免的要在其表面造成可见的机械划痕和不可见的损伤区。表面损伤对探测器的影响很大 ,控制好HgCdTe晶片的表面损伤是制备高性能多元探测器一个重要的工艺环节。在本文中 ,用电化学腐蚀的方法观察到这种不可见损伤区的存在 ,用电子探针成分分析法验证了实验结果 ,对电化学腐蚀机理进行了讨论。实验结果表明 :通过电化学腐蚀方法可以直接观察HgCdTe表面不可见损伤区 ;即使是在显微镜下看到HgCdTe晶片有一个光亮和无划痕的表面 ,也可能存在不可见的损伤区。
In lapping and polishing processes of HgCdTe wafers, the mechanical scratches and unseen damage zones on their surface will be inevitably formed. The surface damage will affect the detector properties, so that controlling damages on HgCdTe wafer surface is very critical.In this our experiments, the unseen damage zones used are found, and proved by the method of analysed composition of electronic probe. The basic principle of electrochemical etch is discussed. The experiments show that the method is good for directly observing the unseen damage zones on HgCdTe wafer surface. There may be exist unseen damagezones on HgCdTe wafer surface,even if no mechanical scratches are found with the high-magnification microscope.
出处
《红外技术》
CSCD
北大核心
2001年第4期18-21,共4页
Infrared Technology
